This insulated gate bipolar transistor igbt features a robust and. Operating junction and storage temperature range tj and tstg. Ixys 600v genx3tm igbts are offered in various standard packages, including the full gamut of surface mount and discrete packages with current ratings from 36 amperes to 210 amperes. This device is igbt insulated gate bipolar transistor. Fod3184 3a output current, high speed mosfetigbt gate. Igbt transistor bsp 280 preliminary data vce v i c 2.
Fod3184 3a output current, high speed mosfetigbt gate driver optocoupler safety and insulation ratings as per din eniec 6074752. Therefore, what follows deals only with mosfet models. Diode soa 0 0,5 1 1,5 2 2,5 0 2000 3000 vr v 2000 0 2000 3000 time 400nsdiv vr 500v d i v ir 500a d i v. Preliminary datasheet rjp63f3dppm0 silicon n channel igbt high speed power switching features trench gate and thin wafer technology g6h series low collector to emitter saturation voltage. Gt30f124 datasheet, gt30f124 pdf, pinouts, circuit toshiba. Igbt datasheet, igbt pdf, igbt data sheet, datasheet, data sheet, pdf. Unit gate bipolar power transistor in a plastic envelope. Ntc connected to baseplate v isol 2,5 kv elektrische eigenschaften electrical properties charakteristische werte characteristic values diode gleichrichter diode rectifier min.
Vce collectoremitter voltage 800 v the device is intended for use in ic collector current dc 12 a. Igbts combine the mosfet advantage of high input impedance with the bipolar transistor advantage of highvoltage drive. Iegt 4500v datasheet, cross reference, circuit and application notes in pdf format. Toshiba insulated gate bipolar transistor silicon n channel igbt gt30j322 fourthgeneration igbt current resonance inverter switching applications zfrd included. Search 2sk2508 online from elcodis, view and download k2508 pdf datasheet, diacs, sidacs specifications. Igbtmodule igbtmodules bsm25gp120 modul isolation module isolation isolationsprufspannung insulation test voltage rms, f 50 hz, t 1 min. An alternative approach to avoid failures is to monitor igbt health individually under operation by using a datadriven method to analyze the operating data and detect for faulty. Application note 38c2 group timer x operation igbt output mode.
Discrete igbt 30f124 gt30f124 300v 200a to220sis package, gt30f124 pdf download toshiba, gt30f124 datasheet pdf, pinouts, data sheet, circuits. Furthermore, some devices will be offered in plus and isoplus isolated packages, featuring ul recognized 2500v isolation and superior thermal performance. Insulated gate bipolar transistor igbt buk854800a general description quick reference data fastswitching nchannel insulated symbol parameter max. Discrete igbt 30g124 30f125, 30j124 pdf download toshiba, 30j124 circuits. Preliminary datasheet rjp30e2dppm0 electronica60norte.
Unit v ces collector emitter voltage t vj 25c to 125c 650 v v ges v gem max. Preliminary datasheet rjp63k2dppm0 silicon n channel igbt high speed power switching features trench gate and thin wafer technology g6hii series low collector to emitter saturation voltage. Discrete igbt 30f124 gt30f124 300v 200a to220sis package, 30f124 pdf download toshiba, 30f124 datasheet pdf, pinouts, data sheet, circuits. The chip structure also evolved from a flat planar structure to a trench gate structure, and the cstbt mitsubishi electric s unique igbt that. Preliminary datasheet rjp30e2dppm0 silicon n channel igbt high speed power switching features trench gate technology g5h series low collector to emitter saturation voltage vcesat 1. This optocoupler is suitable for safe electrical insulation only within the safety limit data. Unit r jcigbt thermal resistance, junctiontocase 0. Fod3184 3a output current, high speed mosfetigbt gate driver. Insulated gate bipolar transistor igbts combine the mosfet advantage of high input impedance with the bipolar transistor advantage of highvoltage drive. This optocoupler is suitable for safe electrical insulation only. Failure mechanisms of insulated gate bipolar transistors. Igbt datasheet tutorial introduction this application note is intended to provide detailed explanations about parameters and diagrams included in the datasheet of trenchgate field stop igbts offered in discrete packages such as.
Igbt insulated gate bipolar transistor module is a device required for inverter use in many types of industrial equipment, and had driven the trend towards high currents and high voltage since 1990. Igbt insulated gate bipolar transistor 1 transistor on epoxy pcb 40 mm. Igbt datasheet tutorial introduction this application note is intended to provide detailed explanations about parameters and diagrams included in the datasheet of trenchgate field stop igbts offered in. Ntc connected to baseplate v isol 2,5 kv elektrische eigenschaften. As far as driving igbt is concerned, it resembles a mosfet and hence all turnon and turnoff phenomena comments, diagrams and driver circuits designed for driving mosfet apply equally well to an igbt. As far as driving igbt is concerned, it resembles a mosfet and hence all turnon and turnoff phenomena comments, diagrams and driver circuits designed for driving mosfet apply equally well. Discrete igbt 30f124 gt30f124 300v 200a to220sis package maker. Igbt datasheet, igbt pdf, igbt data sheet, igbt manual, igbt pdf, igbt, datenblatt, electronics igbt, alldatasheet, free, datasheet, datasheets, data sheet, datas.
Toshiba iegt datasheet, cross reference, circuit and application notes in pdf. Insulated gate bipolar transistor with ultrafast soft recovery diode e g nchannel c vces 600v ic 48a, tc 100c tsc. Gt30f124 30g122 30f124 igbt gt30f124 gt30j124 gt45f122. Preliminary datasheet rjp63f3dppm0 silicon n channel igbt high speed power switching features trench gate and thin wafer technology g6h series low collector to emitter saturation voltage vcesat 1. Igbt transistors are available at mouser electronics from industry leading manufacturers. Toshiba insulated gate bipolar transistor silicon n channel igbt gt30j322 fourthgeneration igbt current resonance inverter switching applications zfrd included between emitter and collector zenhancement mode type zhigh speed.
Gt30f1 transistor datasheet, gt30f1 equivalent, pdf data sheets. Discrete igbt 30f124 gt30f124 300v 200a to220sis package, 30f124 pdf download toshiba, 30f124 datasheet pdf, pinouts, data sheet, equivalent, schematic, cross reference, obsolete, circuits. Technische information technical information igbtmodules. Paralleling igbt modules becomes necessary when the output current requirement cannot be provided by a single igbt module. Aug 29, 2016 30f124 datasheet 300v 200a igbt, datasheet, 30f124 pdf, 30f124 pinouts, circuit, ic, manual, substitute, parts, 30f124 datenblatt, schematic, reference. A single module of an igbt is capable of handling currents up to 600 a in the. The gn2470 igbt has lower onstate voltage drop with. Failure mechanisms of insulated gate bipolar transistors igbts. Gt30j126 toshiba insulated gate bipolar transistor silicon n channel igbt gt30j126 high power switching applications unit. Preliminary datasheet rjp30h2dpkm0 rjp30h2a silicon n channel igbt high speed power switching features trench gate and thin wafer technology g6hii series low collector to emitter saturation. Gt30f124 30g122 30f124 igbt gt30f124 gt30j124 gt45f122 tpca8023 gt30f123 gt50n322. Discrete igbt 30f124 gt30f124 300v 200a to220sis package. The chip structure also evolved from a flat planar structure to a trench gate structure, and the cstbt mitsubishi electric.
Preliminary datasheet rjp30h2dpkm0 rjp30h2a silicon n channel igbt high speed power switching features trench gate and thin wafer technology g6hii series low collector to emitter saturation voltage. Mouser is an authorized distributor for many igbt transistor manufacturers including fairchild, infineon, ixys. This website provides information about our semiconductor and storage products. Igbt gate driver reference design for parallel igbts with. Factors affecting the spreadability of thermal grease the thermal grease is printed onto the igbt module or the cooling fin, and the force exerted by tightening the screws that secure the. Toshiba 30f124 datasheet pdf 30f124 pinout gt30f124 igbt, to220sis, 300v 30f124 applications. May 30, 2016 30f123 datasheet pdf igbt, 30f123 datasheet, 30f123 pdf, 30f123 pinout, 30f123 data, circuit, ic, manual, substitute, parts, schematic, reference. Factors affecting the spreadability of thermal grease the thermal grease is printed onto the igbt module or the cooling fin, and the force exerted by tightening the screws that secure the igbt module to the cooling fin causes the thermal grease to spread out and fill the gap between the igbt module and cooling fin. Discrete igbt 30f124 gt30f124 300v 200a to220sis package, 30f124 pdf download toshiba, 30f124 datasheet pdf, pinouts, data sheet, equivalent, schematic, cross. Preliminary datasheet rjp63f3dppm0 renesas electronics. A single module of an igbt is capable of handling currents up to 600 a in the dual configuration.
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